Samsung Invests $2.3 billion in New China Fab

Samsung Electronics today held a groundbreaking ceremony for a major new memory fabrication line in Xi'an, China. Once completed, the new facility will make use of advanced 10-nanometer (nm)-class technology in producing NAND flash memory chips. The Samsung China Semiconductor complex has a target timeline for achieving full-fledged operation in 2014. Initially, Samsung is investing US$2.3 billion in the Xi'an fab. Samsung China Semiconductor will mark the single largest investment by Samsung in China with a phased total investment of US$7 billion. Xi'an is home to 37 universities and 3,000 R&D centers focused on advanced IT technology.